TK7Q60W,S1VQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK7Q60W,S1VQ Toshiba Semiconductor and Storage
TK7Q60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 7A IPAK

TK7Q60W,S1VQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 7A IPAK. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

In Stock: 5,407

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 300 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-Pak
Package / CaseTO-251-3 Stub Leads, IPak

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