Name: TK6R9P08QM,RQ
Brand: Toshiba Semiconductor and Storage
SKU: TK6R9P08QM,RQ
Price: 1.09 USD
Availability: InStock

REF: TK6R9P08QM,RQ Toshiba Semiconductor and Storage

TK6R9P08QM,RQ

Toshiba Semiconductor and Storage

UMOS10 DPAK 80V 6.9MOHM

TK6R9P08QM,RQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. UMOS10 DPAK 80V 6.9MOHM. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

Datasheet Request a Quote

In Stock: 8,530

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id	3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63