TK6P65W,RQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK6P65W,RQ Toshiba Semiconductor and Storage
TK6P65W,RQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 5.8A DPAK

TK6P65W,RQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 5.8A DPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 1,296

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 300 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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