Name: TK65G10N1,RQ
Brand: Toshiba Semiconductor and Storage
SKU: TK65G10N1,RQ
Availability: InStock

REF: TK65G10N1,RQ Toshiba Semiconductor and Storage

TK65G10N1,RQ

MOSFET N-CH 100V 65A D2PAK

TK65G10N1,RQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 65A D2PAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 3,519

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	65A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB