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TK65E10N1,S1X

In Stock: 150
TK65E10N1,S1X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK65E10N1,S1X Toshiba Semiconductor and Storage
TK65E10N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 100V 148A TO220

TK65E10N1,S1X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 100V 148A TO220. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

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In Stock: 150

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C148A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 50 V
FET Feature-
Power Dissipation (Max)192W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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