TK650A60F,S4X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK650A60F,S4X Toshiba Semiconductor and Storage
TK650A60F,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11A TO220SIS

TK650A60F,S4X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 11A TO220SIS. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-220-3 Full Pack.

In Stock: 12

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 1.16mA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1320 pF @ 300 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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