Name: TK60D08J1(Q)
Brand: Toshiba Semiconductor and Storage
SKU: TK60D08J1(Q)
Availability: InStock

REF: TK60D08J1(Q) Toshiba Semiconductor and Storage

TK60D08J1(Q)

MOSFET N-CH 75V 60A TO220

TK60D08J1(Q) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 75V 60A TO220. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

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In Stock: 3,301

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5450 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220(W)
Package / Case	TO-220-3