TK56E12N1,S1X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK56E12N1,S1X Toshiba Semiconductor and Storage
TK56E12N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 120V 56A TO-220

TK56E12N1,S1X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 120V 56A TO-220. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

In Stock: 3,227

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C56A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7mOhm @ 28A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 60 V
FET Feature-
Power Dissipation (Max)168W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Need a Quote for TK56E12N1,S1X?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →