TK55S10N1,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK55S10N1,LQ Toshiba Semiconductor and Storage
TK55S10N1,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 55A DPAK

TK55S10N1,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 55A DPAK. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 2,610

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3280 pF @ 10 V
FET Feature-
Power Dissipation (Max)157W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK+
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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