Name: TK50P03M1(T6RSS-Q)
Brand: Toshiba Semiconductor and Storage
SKU: TK50P03M1(T6RSS-Q)
Availability: InStock

REF: TK50P03M1(T6RSS-Q) Toshiba Semiconductor and Storage

TK50P03M1(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 50A DP

TK50P03M1(T6RSS-Q) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 30V 50A DP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 3,843

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	25.3 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	47W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63