Name: TK3R2E06PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK3R2E06PL,S1X
Price: 1.67 USD
Availability: InStock

REF: TK3R2E06PL,S1X Toshiba Semiconductor and Storage

TK3R2E06PL,S1X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

TK3R2E06PL,S1X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. X35 PB-F POWER MOSFET TRANSISTOR. Key specifications: mounting type Through Hole, operating temperature 175°C, package / case TO-220-3.

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In Stock: 3,492

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5000 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	168W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3