Name: TK35N65W5,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK35N65W5,S1F
Price: 7.45 USD
Availability: InStock

REF: TK35N65W5,S1F Toshiba Semiconductor and Storage

TK35N65W5,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO247

TK35N65W5,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 35A TO247. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3.

Datasheet Request a Quote

In Stock: 8,261

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	270W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3