TK33S10N1L,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK33S10N1L,LQ Toshiba Semiconductor and Storage
TK33S10N1L,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

TK33S10N1L,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 33A DPAK. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 3,244

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C33A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.7mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 10 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device PackageDPAK+
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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