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TK31N60W,S1VF

In Stock: 8,418
TK31N60W,S1VF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK31N60W,S1VF Toshiba Semiconductor and Storage
TK31N60W,S1VF

Toshiba Semiconductor and Storage

MOSFET N CH 600V 30.8A TO247

TK31N60W,S1VF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 600V 30.8A TO247. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3.

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In Stock: 8,418

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs86 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)230W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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