Name: TK30E06N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK30E06N1,S1X
Price: 1.02 USD
Availability: InStock

REF: TK30E06N1,S1X Toshiba Semiconductor and Storage

TK30E06N1,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 43A TO220

TK30E06N1,S1X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 60V 43A TO220. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

Datasheet Request a Quote

In Stock: 1,075

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	43A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	53W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3