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TK2R4E08QM,S1X

In Stock: 24
TK2R4E08QM,S1X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK2R4E08QM,S1X Toshiba Semiconductor and Storage
TK2R4E08QM,S1X

Toshiba Semiconductor and Storage

UMOS10 TO-220AB 80V 2.4MOHM

TK2R4E08QM,S1X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. UMOS10 TO-220AB 80V 2.4MOHM. Key specifications: mounting type Through Hole, operating temperature 175°C, package / case TO-220-3.

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In Stock: 24

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.44mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 2.2mA
Gate Charge (Qg) (Max) @ Vgs178 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13000 pF @ 40 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature175°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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