TK2Q60D(Q) - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK2Q60D(Q) Toshiba Semiconductor and Storage
TK2Q60D(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD2

TK2Q60D(Q) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 2A PW-MOLD2. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

In Stock: 3,776

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePW-MOLD2
Package / CaseTO-251-3 Stub Leads, IPak

Need a Quote for TK2Q60D(Q)?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →