Name: TK28N65W,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK28N65W,S1F
Price: 5.05 USD
Availability: InStock

REF: TK28N65W,S1F Toshiba Semiconductor and Storage

TK28N65W,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO247

TK28N65W,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 27.6A TO247. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3.

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In Stock: 3,376

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	110mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3