TK25N60X,S1F - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK25N60X,S1F Toshiba Semiconductor and Storage
TK25N60X,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO247

TK25N60X,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 25A TO247. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3.

In Stock: 5,686

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 300 V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

Need a Quote for TK25N60X,S1F?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →