TK20G60W,RVQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK20G60W,RVQ Toshiba Semiconductor and Storage
TK20G60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 20A D2PAK

TK20G60W,RVQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 600V 20A D2PAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 6,470

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs155mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)165W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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