TK190U65Z,RQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK190U65Z,RQ Toshiba Semiconductor and Storage
TK190U65Z,RQ

Toshiba Semiconductor and Storage

DTMOS VI TOLL PD=130W F=1MHZ

TK190U65Z,RQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. DTMOS VI TOLL PD=130W F=1MHZ. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 8-PowerSFN.

In Stock: 3,313

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 300 V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageTOLL
Package / Case8-PowerSFN

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