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TK18E10K3,S1X(S

In Stock: 5,520
TK18E10K3,S1X(S - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK18E10K3,S1X(S Toshiba Semiconductor and Storage
TK18E10K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 18A TO220-3

TK18E10K3,S1X(S is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 18A TO220-3. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

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In Stock: 5,520

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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