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TK17E65W,S1X

In Stock: 3,862
TK17E65W,S1X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK17E65W,S1X Toshiba Semiconductor and Storage
TK17E65W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 17.3A TO220

TK17E65W,S1X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 17.3A TO220. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

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In Stock: 3,862

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 300 V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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