TK170V65Z,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK170V65Z,LQ Toshiba Semiconductor and Storage
TK170V65Z,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A 5DFN

TK170V65Z,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 18A 5DFN. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 4-VSFN Exposed Pad.

In Stock: 2,470

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 730µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1635 pF @ 300 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package4-DFN-EP (8x8)
Package / Case4-VSFN Exposed Pad

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