TK16N60W,S1VF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK16N60W,S1VF Toshiba Semiconductor and Storage
TK16N60W,S1VF

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO247

TK16N60W,S1VF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 600V 15.8A TO247. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3.

In Stock: 6,255

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)130W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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