TK160F10N1,LXGQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK160F10N1,LXGQ Toshiba Semiconductor and Storage
TK160F10N1,LXGQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

TK160F10N1,LXGQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 160A TO220SM. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 7,588

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs121 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8510 pF @ 10 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device PackageTO-220SM(W)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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