TK14E65W5,S1X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK14E65W5,S1X Toshiba Semiconductor and Storage
TK14E65W5,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO220

TK14E65W5,S1X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 13.7A TO220. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

In Stock: 35

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 300 V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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