TK12Q60W,S1VQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: TK12Q60W,S1VQ Toshiba Semiconductor and Storage
TK12Q60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 11.5A IPAK

TK12Q60W,S1VQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 600V 11.5A IPAK. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

In Stock: 6,208

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs340mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds890 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-Pak
Package / CaseTO-251-3 Stub Leads, IPak

Need a Quote for TK12Q60W,S1VQ?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →