Name: TK12E80W,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK12E80W,S1X
Price: 3.44 USD
Availability: InStock

REF: TK12E80W,S1X Toshiba Semiconductor and Storage

TK12E80W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V 11.5A TO220

TK12E80W,S1X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 800V 11.5A TO220. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-220-3.

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In Stock: 9,991

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3