Name: TK100L60W,VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK100L60W,VQ
Price: 33.12 USD
Availability: InStock

REF: TK100L60W,VQ Toshiba Semiconductor and Storage

TK100L60W,VQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 100A TO3P

TK100L60W,VQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 100A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3PL.

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In Stock: 15

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	360 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 30 V
FET Feature	Super Junction
Power Dissipation (Max)	797W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(L)
Package / Case	TO-3PL