Name: TJ10S04M3L(T6L1,NQ
Brand: Toshiba Semiconductor and Storage
SKU: TJ10S04M3L(T6L1,NQ
Price: 0.54 USD
Availability: InStock

REF: TJ10S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

TJ10S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 10A DPAK

TJ10S04M3L(T6L1,NQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 40V 10A DPAK. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 3,823

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	44mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V

Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	930 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	27W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK+
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63