Name: SSM6K217FE,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM6K217FE,LF
Price: 0.38 USD
Availability: InStock

REF: SSM6K217FE,LF Toshiba Semiconductor and Storage

SSM6K217FE,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 1.8A ES6

SSM6K217FE,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 40V 1.8A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-563, SOT-666.

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In Stock: 7,107

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Rds On (Max) @ Id, Vgs	195mOhm @ 1A, 8V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.1 nC @ 4.2 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ES6
Package / Case	SOT-563, SOT-666