SSM6K202FE,LF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: SSM6K202FE,LF Toshiba Semiconductor and Storage
SSM6K202FE,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.3A ES6

SSM6K202FE,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 30V 2.3A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-563, SOT-666.

In Stock: 1,144

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Rds On (Max) @ Id, Vgs85mOhm @ 1.5A, 4V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 10 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageES6
Package / CaseSOT-563, SOT-666

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