SSM6J507NU,LF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: SSM6J507NU,LF Toshiba Semiconductor and Storage
SSM6J507NU,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 10A 6UDFNB

SSM6J507NU,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 30V 10A 6UDFNB. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-WDFN Exposed Pad.

In Stock: 4,445

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.4 nC @ 4.5 V
Vgs (Max)+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-UDFNB (2x2)
Package / Case6-WDFN Exposed Pad

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