SSM6J216FE,LF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: SSM6J216FE,LF Toshiba Semiconductor and Storage
SSM6J216FE,LF

Toshiba Semiconductor and Storage

MOSFET P-CHANNEL 12V 4.8A ES6

SSM6J216FE,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CHANNEL 12V 4.8A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SOT-563, SOT-666.

In Stock: 2,302

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs32mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12.7 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1040 pF @ 12 V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageES6
Package / CaseSOT-563, SOT-666

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