SSM6H19NU,LF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: SSM6H19NU,LF Toshiba Semiconductor and Storage
SSM6H19NU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A 6UDFN

SSM6H19NU,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 40V 2A 6UDFN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-UDFN Exposed Pad.

In Stock: 54,380

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 8V
Rds On (Max) @ Id, Vgs185mOhm @ 1A, 8V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.2 nC @ 4.2 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds130 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-UDFN (2x2)
Package / Case6-UDFN Exposed Pad

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