SSM3K376R,LF - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: SSM3K376R,LF Toshiba Semiconductor and Storage
SSM3K376R,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT23F

SSM3K376R,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 30V 4A SOT23F. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SOT-23-3 Flat Leads.

In Stock: 2,509

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs56mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.2 nC @ 4.5 V
Vgs (Max)+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 10 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageSOT-23F
Package / CaseSOT-23-3 Flat Leads

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