SSM3J35AMFV,L3F - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: SSM3J35AMFV,L3F Toshiba Semiconductor and Storage
SSM3J35AMFV,L3F

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 250MA VESM

SSM3J35AMFV,L3F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 20V 250MA VESM. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SOT-723.

In Stock: 11,566

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds42 pF @ 10 V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageVESM
Package / CaseSOT-723

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