2SK3700(F) - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: 2SK3700(F) Toshiba Semiconductor and Storage
2SK3700(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 5A TO3P

2SK3700(F) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 900V 5A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3P-3, SC-65-3.

In Stock: 8,234

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3

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