2SK3132(Q) - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: 2SK3132(Q) Toshiba Semiconductor and Storage
2SK3132(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 50A TO3P

2SK3132(Q) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 500V 50A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3PL.

In Stock: 5,101

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 25A, 10V
Vgs(th) (Max) @ Id3.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs280 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 10 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(L)
Package / CaseTO-3PL

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