2SK2963(TE12L,F) - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: 2SK2963(TE12L,F) Toshiba Semiconductor and Storage
2SK2963(TE12L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 1A PW-MINI

2SK2963(TE12L,F) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 1A PW-MINI. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-243AA.

In Stock: 3,483

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs700mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 10 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePW-MINI
Package / CaseTO-243AA

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