Name: 2SK2866(F)
Brand: Toshiba Semiconductor and Storage
SKU: 2SK2866(F)
Availability: InStock

REF: 2SK2866(F) Toshiba Semiconductor and Storage

2SK2866(F)

MOSFET N-CH 600V 10A TO220AB

2SK2866(F) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 10A TO220AB. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

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In Stock: 1,048

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2040 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3