2SK2847(F) - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: 2SK2847(F) Toshiba Semiconductor and Storage
2SK2847(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO3PIS

2SK2847(F) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 900V 8A TO3PIS. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3P-3, SC-65-3.

In Stock: 7,316

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2040 pF @ 25 V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)IS
Package / CaseTO-3P-3, SC-65-3

Need a Quote for 2SK2847(F)?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →