Name: 2SK2845(TE16L1,Q)
Brand: Toshiba Semiconductor and Storage
SKU: 2SK2845(TE16L1,Q)
Availability: InStock

REF: 2SK2845(TE16L1,Q) Toshiba Semiconductor and Storage

2SK2845(TE16L1,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 1A DP

2SK2845(TE16L1,Q) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 900V 1A DP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 4,159

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PW-MOLD
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63