2SJ681(Q) - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single
REF: 2SJ681(Q) Toshiba Semiconductor and Storage
2SJ681(Q)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD2

2SJ681(Q) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 60V 5A PW-MOLD2. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

In Stock: 1,864

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs170mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 10 V
FET Feature-
Power Dissipation (Max)20W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePW-MOLD2
Package / CaseTO-251-3 Stub Leads, IPak

Need a Quote for 2SJ681(Q)?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →