Name: 2SJ360(F)
Brand: Toshiba Semiconductor and Storage
SKU: 2SJ360(F)
Availability: InStock

REF: 2SJ360(F) Toshiba Semiconductor and Storage

2SJ360(F)

MOSFET P-CH 60V 1A PW-MINI

2SJ360(F) is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 60V 1A PW-MINI. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-243AA.

Datasheet Request a Quote

In Stock: 2,282

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	730mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	155 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PW-MINI
Package / Case	TO-243AA