Name: CSD25213W10
Brand: Texas Instruments
SKU: CSD25213W10
Price: 0.49 USD
Availability: InStock

REF: CSD25213W10 Texas Instruments

CSD25213W10

MOSFET P-CH 20V 1.6A 4DSBGA

CSD25213W10 is a Transistors - FETs, MOSFETs - Single manufactured by Texas Instruments. MOSFET P-CH 20V 1.6A 4DSBGA. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-UFBGA, DSBGA.

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In Stock: 15,196

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	47mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.9 nC @ 4.5 V

Vgs (Max)	-6V
Input Capacitance (Ciss) (Max) @ Vds	478 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-DSBGA (1x1)
Package / Case	4-UFBGA, DSBGA