TSM650N15CR RLG - Taiwan Semiconductor Corporation - Transistors - FETs, MOSFETs - Single
REF: TSM650N15CR RLG Taiwan Semiconductor Corporation
TSM650N15CR RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 150V 24A 8PDFN

TSM650N15CR RLG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 150V 24A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 1,057

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1829 pF @ 75 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (5x6)
Package / Case8-PowerTDFN

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