Name: TSM60NB190CM2 RNG
Brand: Taiwan Semiconductor Corporation
SKU: TSM60NB190CM2 RNG
Price: 4.76 USD
Availability: InStock

REF: TSM60NB190CM2 RNG Taiwan Semiconductor Corporation

TSM60NB190CM2 RNG

Taiwan Semiconductor Corporation

MOSFET N-CH 600V 18A TO263

TSM60NB190CM2 RNG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 600V 18A TO263. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 1,363

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1273 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	150.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB