Name: TSM4ND65CI
Brand: Taiwan Semiconductor Corporation
SKU: TSM4ND65CI
Price: 1.19 USD
Availability: InStock

REF: TSM4ND65CI Taiwan Semiconductor Corporation

TSM4ND65CI

Taiwan Semiconductor Corporation

MOSFET N-CH 650V 4A ITO220

TSM4ND65CI is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 650V 4A ITO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

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In Stock: 3,875

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.8 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	596 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	41.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220
Package / Case	TO-220-3 Full Pack, Isolated Tab